Atomic Diffusion Bonding (ADB) Equipment BC7300
BC7300 Atomic Diffusion Bonding equipment offers ultra-high vacuum in-situ processes of wafer transfer, film deposition, bonding and bonded wafer collection with automatic operation.
It is capable of handling ∅200 mm and ∅300 mm wafers. Mirror polished wafers of any materials can be bonded at room temperature without pressure by optimization of bonding film and thickness of deposited film at bonding interface.
Information
Bonding at room-temperature
It is not required to heat up due to using atomic diffusion.
No pressure during bonding
It is not required to pressurize due to using surface energy.
High bonding strength
Provides high bonding strength, excellent reliability and high endurance due to atomic diffusion binding.
Bonding of any similar or dissimilar materials
It is available to adapt the low thermal budget device or differential metals with discrepancy of thermal expansion coefficient.
- Metal film deposits on each wafer
- They contact each other in-situ of ultra-high vacuum
- They can be bonded with atomic diffusion
- Advanced Packaging
- LED
- Power Device
Bonding of compound substrates such as SiC bonded substrates - MEMS*1
Bonding Si substrate and glass substrate
* Please contact us for other bonding materials.
*1 MEMS:Micro Electro Mechanical Systems
BC7300 equipment can be bonding the following materials with ∅200 mm and ∅300 mm wafers.
List of materials for sputter deposition as bonding materials
- Titanium (Ti)
- Silicon (Si)
- Aluminum Oxide (Al2O3)
- Aluminum Nitride (AlN)
* We will propose the best bonding material for your application.
- System configuration : Cluster type
- Substrate : ∅200 mm, ∅300 mm
- Main pump : Turbo Molecular Pump (TMP)
- Electric power : 3φ AC200 V±10%, 225 A, 50/60 Hz
- Cooling water : 21 - 33 L/min 0.2 - 0.3 MPa 15 - 30℃
- Compressed air : 0.5 - 0.8 MPa
- Process Gas : 0.15 - 0.4 MPa
- Weight : 6730 kg (Main body)
- Footprint : W4000 mm×D7100 mm (standard specification)
