Metal Gate Process PVD Equipment FC7100
φ300mm support cluster type PVD equipment for damage-less metal gate production using our original sputtering technology.
Information
Metal gate mass production
- Capable of controlled film composition through ultrahigh vacuum co-sputtering.
- High-precision control of (0.1nm unit) film thickness and excellent uniformity (1σ < 1%).
- Compatible with the sub-32nm node or less damascene gate formation process.
(High-coverage deposition with the PCM-PVD method). - Low material cost through use of compact cathode. Easy material changeover.
- System configuration:Cluster type
- Substrate size:φ300mm