Metal Gate Process PVD Equipment FC7100

φ300mm support cluster type PVD equipment for damage-less metal gate production using our original sputtering technology.


Metal gate mass production

  • Capable of controlled film composition through ultrahigh vacuum co-sputtering.
  • High-precision control of (0.1nm unit) film thickness and excellent uniformity (1σ < 1%).
  • Compatible with the sub-32nm node or less damascene gate formation process.
    (High-coverage deposition with the PCM-PVD method).
  • Low material cost through use of compact cathode. Easy material changeover.
  • System configuration:Cluster type
  • Substrate size:φ300mm